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| S T U/D2040P L S amHop Microelectronics C orp. Nov.18,2004 P -C hannel E nhancement Mode MOS FE T P R ODUC T S UMMAR Y V DS S -40V F E AT UR E S ( m W ) Max ID -20A R DS (ON) S uper high dense cell design for low R DS (ON). 45 @ V G S = -10V 60 @ V G S = -4.5V R ugged and reliable. TO-252 and TO-251 P ackage. D D G S G D S G S TU S E R IE S TO-252AA(D-P AK) S TD S E R IE S TO-251(l-P AK) S AB S OL UTE MAXIMUM R ATINGS P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Ta -P ulsed b a (TA=25 C unles s otherwis e noted) S ymbol VDS VGS Limit -40 20 -20 -16.7 -84 -20 50 35 -55 to 175 W C Unit V V A A A A 25 C 70 C ID IDM IS PD TJ, TS TG Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange Ta= 25 C Ta=70 C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient R JC R JA 3 50 C /W C /W S T U/D2040P L P-Channel ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) Parameter 5 S ymbol BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS CISS COSS CRSS Rg c Condition VGS = 0V, ID = -250uA VDS = -32V, VGS= 0V VGS = 20V, VDS = 0V VDS = VGS, ID =-250uA VGS =-10V, ID= -16A VGS =-4.5V, ID = -10A VDS =-5V, VGS = -10V VDS = -10V, ID = -15A Min Typ C Max Unit -40 1 V uA 100 nA -0.8 -1.5 35 46 50 15 1115 1250 200 125 3 11.5 7.3 53.1 31.8 19.5 9.4 4.1 2.8 13 8.5 62 37 22 11 4.8 3.2 225 140 -2.0 45 60 V m ohm m ohm OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance A S PF PF PF DYNAMIC CHAR ACTE R IS TICS c Input Capacitance Output Capacitance R everse Transfer Capacitance Gate resistance VDS =-10V, VGS = 0V f =1.0MHZ VGS =0V, VDS = 0V, f=1.0MHZ VDD = -24V ID = -16 A VGS = -10V R GE N = 4.7 ohm VDS =-24V, ID =-16A,VGS =-10V VDS =-24V, ID =-16A,VGS =-4.5V ohm S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd ns ns ns ns nC nC nC nC VDS =-24V, ID = -16A VGS =-10V 2 S T U/D2040P L E LE CTR ICAL CHAR ACTE R IS TICS (TC=25 C unless otherwise noted) Parameter Diode Forward Voltage S ymbol VSD Condition VGS = 0V, Is =-20A Min Typ Max Unit -1.02 -1.3 V DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS a Notes a.Pulse Test:Pulse Width 300us, Duty Cycle 2%. b.Guaranteed by design, not subject to production testing. 20 -V G S =10V 20 -55 C 25 C -ID, Drain C urrent(A) 16 -V G S =4V -ID, Drain C urrent (A) -V G S =4.5V 12 -V G S =3V 15 T j=125 C 10 8 4 0 5 0 0 0.5 1 1.5 2 2.5 3 0 1.5 2.0 2.5 3 3.5 4 -V DS , Drain-to-S ource Voltage (V ) -V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 1800 1.6 F igure 2. Trans fer C haracteris tics R DS (ON), On-R es is tance Normalized 1500 1.4 1.2 1.0 0.8 0.6 0.4 -55 V G S =-10V ID=-16A C , C apacitance (pF ) 1200 900 600 300 0 C rs s 0 5 10 15 20 25 C is s C os s 30 -25 0 25 50 75 100 125 T j( C ) -V DS , Drain-to S ource Voltage (V ) T j, J unction T emperature ( C ) F igure 3. C apacitance F igure 4. On-R es is tance Variation with Drain C urrent and Temperature 3 S T U/D2040P L B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 V DS =V G S ID=-250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 ID=-250uA T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature 18 F igure 6. B reakdown V oltage V ariation with T emperature 20 10 gFS , T rans conductance (S ) 12 9 6 3 0 V DS =-10V 0 5 10 15 20 25 -Is , S ource-drain current (A) 15 1 0.4 0.6 0.8 1.0 T J =25 C 1.2 1.4 -IDS , Drain-S ource C urrent (A) -V S D, B ody Diode F orward V oltage (V ) F igure 7. T rans conductance V ariation with Drain C urrent -V G S , G ate to S ource V oltage (V ) F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 90 -ID, Drain C urrent (A) 10 8 6 4 2 0 0 3 6 9 12 15 18 21 24 Qg, T otal G ate C harge (nC ) VDS =-24V ID=-16A 50 RD ON S( )L im it 10 0m 10 ms 1s s 10 DC 1 0.03 VGS =-10V S ingle P ulse T c=25 C 0.1 1 10 40 60 -V DS , Drain-S ource V oltage (V ) F igure 9. G ate C harge F igure 10. Maximum S afe O perating Area 4 S T U/D2040P L V DD ton V IN D VG S R GE N G 90% toff tr 90% RL V OUT td(on) V OUT td(off) 90% 10% tf 10% INVE R TE D 6 S V IN 50% 10% 50% P ULS E WIDTH F igure 11. S witching T es t C ircuit 10 F igure 12. S witching Waveforms Normalized Transient Thermal Resistance 1 0.5 0.2 0.1 P DM t1 on 0.1 0.05 0.02 0.01 t2 Single Pulse 0.0001 0.001 0.01 0.1 0.01 0.00001 1. 2. 3. 4. R thJ A (t)=r (t) * R thJ A R thJ A=S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 5 1 10 100 1000 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 5 S T U/D2040P L 6 S T U/D2040P L 5 95 7 84 9 6.00 35 05 85 0.94 4 3 0 9 7 30 3 9 36 3 41 3 3 5 1 4 L2 2.29 9.70 1.425 0.650 0.600 BSC 1 1.625 0.850 REF. 0.090 82 56 6 0.024 BSC 398 0.064 33 REF. 7 S T U/D2040P L TO-251 Tube TO251 Tube/TO-252 Tape and Reel Data " A" TO-252 Carrier Tape UNIT:P PACKAGE TO-252 (16 P) A0 6.80 O0.1 B0 10.3 O0.1 K0 2.50 O0.1 D0 r2 D1 r1.5 + 0.1 -0 E 16.0 0.3O E1 1.75 0.1O E2 7.5 O0.15 P0 8.0 O0.1 P1 4.0 O0.1 P2 2.0 O0.15 T 0.3 O0.05 TO-252 Reel S UNIT:P TAPE SIZE 16 P REEL SIZE r 330 M r330 O 0.5 N r97 O 1.0 W 17.0 + 1.5 -0 T 2.2 H r13.0 + 0.5 - 0.2 K 10.6 S 2.0 O0.5 G R V 8 |
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